Publications
2024
Stacking order and electronic band structure in MBE-grown trilayer WSe2 films
A. Mahmoudi, M. Bouaziz, N. Chapuis, F. Oehler, P. Dudin, D. Romanin, G. Patriarche, J. Chaste, F. Sirotti, X. Wallart, J. Avila and A. Ouerghi
Phys. Rev. B (2024)
2023
Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe2 on GaP(111) Heterostructure
A. Mahmoudi, M. Bouaziz, N. Chapuis, G. Kremer, J. Chaste, D. Romanin, M. Pala, F. Bertran, P. Le Fèvre, I. C. Gerber, G. Patriarche, F. Oehler, X. Wallart and A. Ouerghi
Phys. Rev. B (2024)
Electronic properties of rhombohedrally stacked bilayer WSe2 obtained by chemical vapor deposition
A. Mahmoudi, M. Bouaziz, A. Chiout, G. Di Berardino, N. Ullberg, G. Kremer, P. Dudin, J. Avila, M. Silly, V. Derycke, D. Romanin, M. Pala, I. C. Gerber, J. Chaste, F. Oehler and A. Ouerghi
Phys. Rev. B (2024)
Intrinsic defects and mid-gap states in quasi-one-dimensional indium telluride
M. Bouaziz, A. Mahmoudi, G. Kremer, J. Chaste, C. González, Y. J. Dappe, F. Bertran, P. Le Fèvre, M. Pala, F. Oehler, J.-C. Girard and A. Ouerghi
Physical Review Research, 2023, 5 (3), pp.033152.
Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In2Se3
G. Kremer, A. Mahmoudi, A. M'Foukh, M. Bouaziz, M. Rahimi, M. L. Della Rocca, P. Le Fèvre, J.-F. Dayen, F. Bertran, S. Matzen, M. Pala, J. Chaste, F. Oehler, A. Ouerghi
ACS Nano 2023, 17, 19, 18924–18931
Direct observation of highly anisotropic electronic and optical nature in indium telluride
Geoffroy Kremer, Aymen Mahmoudi, Meryem Bouaziz, Cléophanie Brochard-Richard, Lama Khalil, Debora Pierucci, François Bertran, Patrick Le Fèvre, Mathieu G Silly, Julien Chaste, Fabrice Oehler, Marco Pala, Federico Bisti, Abdelkarim Ouerghi
Physical Review Materials, 2023, 7 (7), pp.074601
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off
Daniel Lizzit, Pedram Khakbaz, Francesco Driussi, Marco Pala, David Esseni
ACS Applied Nano Materials, 2023, 6 (7), pp.5737-5746
Thermal conductance of twisted-layer graphite nanofibers
Van-Truong Tran, Thanh-Tra Vu, Jérôme Saint-Martin, Marco Pala, Philippe Dollfus
Carbon, 2023, 204, pp.601-611.
Unidirectional Rashba Spin Splitting in Single Layer WS2(1-x)Se2x alloy
Jihene Zribi, Debora Pierucci, Federico Bisti, Biyuan Zheng, José Avila, Lama Khalil, Cyrine Ernandes, Julien Chaste, Fabrice Oehler, Marco Pala, Thomas Maroutian, Ilka Hermes, Emmanuel Lhuillier, Anlian Pan, Abdelkarim Ouerghi
Nanotechnology, 2023, 34 (7), pp.075705.
Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer
Lama Khalil, Debora Pierucci, Emilio Velez-Fort, José Avila, Céline Vergnaud, Pavel Dudin, Fabrice Oehler, Julien Chaste, Matthieu Jamet, Emmanuel Lhuillier, Marco Pala, Abdelkarim Ouerghi
Nanotechnology, 2023, 34 (4), pp.045702.
Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials
Adel Mfoukh, Jérôme Saint-Martin, Philippe Dollfus, Marco Pala
Journal of Computational Electronics, 2023, 22, pp.1257-1263.
Tunnel Field-Effect Transistors Based on III–V Semiconductors
Marco Pala
Beyond-CMOS: State of the Art and Trends, 1, Wiley, 2023,
2022
Full quantum simulation of Shockley-Read-Hall recombination in p-i-n and tunnel diodes
A. Pilotto, J. Saint-Martin, Marco G. Pala, Philippe Dollfus
Solid-State Electronics, 2022, 198, pp.108469.
α−As2Te3 as a platform for the exploration of the electronic band structure of single layer β−tellurene
Lama Khalil, Pietro Maria Forcella, Geoffroy Kremer, Federico Bisti, Julien Chaste, Jean-Christophe Girard, Fabrice Oehler, Marco Pala, Jean-Francois Dayen, Demetrio Logoteta, Mark Goerbig, François Bertran, Patrick Le Fèvre, Emmanuel Lhuillier, Julien E. Rault, Debora Pierucci, Gianni Profeta, Abdelkarim Ouerghi
Physical Review B, 2022, 106 (12), pp.125152.
Modeling of SPAD avalanche breakdown probability and jitter tail with field lines
Rémi Helleboid, Denis Rideau, Jeremy Grebot, Isobel Nicholson, Norbert Moussy, Olivier Saxod, Jérôme Saint-Martin, Marco G. Pala, Philippe Dollfus
Solid-State Electronics, 2022, 194, pp.108376.
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation
Philippe Dollfus, Jérôme Saint-Martin, T. Cazimajou, R. Helleboid, A. Pilotto, D. Rideau, A. Bournel, Marco G. Pala
Solid-State Electronics, 2022, 194, pp.108361.
Study of phonon transport across Si/Ge interfaces using Full-Band phonon Monte Carlo simulation
N. Le, Brice Davier, N. Izitounene, Philippe Dollfus, J. Saint-Martin
Journal of Computational Electronics, 2022, 21 (4), pp.744-755.
Spectral Simulation of Heat Transfer Across Polytype Interfaces
Nadjib Izitounene, Ngoc Duc Le, Brice Davier, Philippe Dollfus, Lorenzo Paulatto, Jérome Saint-Martin
Crystal Research and Technology, 2022, 57 (9), pp.2200017. ⟨10.1002/crat.202200017⟩
Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy
Debora Pierucci, Aymen Mahmoudi, Mathieu Silly, Federico Bisti, Fabrice Oehler, Gilles Patriarche, Frédéric Bonell, Alain Marty, Céline Vergnaud, Matthieu Jamet, Hervé Boukari, Emmanuel Lhuillier, Marco Pala, Abdelkarim Ouerghi
Nanoscale, 2022, 14 (15), pp.5859-5868. ⟨10.1039/D2NR00458E⟩
Revisiting thermal conductivity and interface conductance at the nanoscale
Brice Davier, Philippe Dollfus, N.D. Le, S. Volz, J. Shiomi, Jérôme Saint-Martin
International Journal of Heat and Mass Transfer, 2022, 183 (Part A), pp.122056. ⟨10.1016/j.ijheatmasstransfer.2021.122056⟩
Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices
Remi Helleboid, Denis Rideau, Jeremy Grebot, Isobel Nicholson, Norbert Moussy, Olivier Saxod, Marie Basset, Antonin Zimmer, Bastien Mamdy, Dominique Golanski, Megan Agnew, Sara Pellegrini, Mathieu Sicre, Christel Buj, Guillaume Marchand, Jérôme Saint-Martin, Marco G. Pala, Philippe Dollfus
IEEE Journal of the Electron Devices Society, 2022, 10, pp.584-592. ⟨10.1109/JEDS.2022.3168365⟩
A Fokker-Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes
Remi Helleboid, Denis Rideau, Isobel Nicholson, Jeremy Grebot, Bastien Mamdy, Gabriel Mugny, Marie Basset, Megan Agnew, Dominique Golanski, Sara Pellegrini, Jerome Saint-Martin, Marco Pala, Philippe Dollfus
Journal of Physics D: Applied Physics, 2022, 55, pp.505102. ⟨10.1088/1361-6463/ac9b6a⟩
Phonon-assisted transport in van der Waals heterostructure tunnel devices
A. M'Foukh, Jérôme Saint-Martin, Philippe Dollfus, Marco G. Pala
Solid-State Electronics, 2022, 194, pp.108344. ⟨10.1016/j.sse.2022.108344⟩
Revisiting thermal conductivity and interface conductance at the nanoscale
B. Davier, P. Dollfus, N.D. Le, S. Volz, J. Shiomi, Jérôme Saint-Martin
International Journal of Heat and Mass Transfer, 2022, 183, Part A, pp.122056. ⟨10.1016/j.ijheatmasstransfer.2021.122056⟩
2021
Quenching Statistics of Silicon Single Photon Avalanche Diodes
Thibauld Cazimajou, Marco G. Pala, Jerome Saint-Martin, Remi Helleboid, Jeremy Grebot, Denis Rideau, Philippe Dollfus
IEEE Journal of the Electron Devices Society, 2021, pp.1-1. ⟨10.1109/JEDS.2021.3127013⟩
A new mixed hardening methodology applied to a 28 nm FDSOI 32-bits DSP subjected to gamma radiation
Alejandro Ureña-Acuña, Jean-Marc Armani, Mariem Slimani, Ivan Miro-Panades, Philippe Dollfus
Microelectronics Reliability, 2021, 126, pp.114397. ⟨10.1016/j.microrel.2021.114397⟩
Strain and Spin-Orbit Coupling Engineering in Twisted WS2/Graphene Heterobilayer
Cyrine Ernandes, Lama Khalil, Hugo Henck, Meng-Qiang Zhao, Julien Chaste, Fabrice Oehler, Alan Johnson, Maria Asensio, Debora Pierucci, Marco Pala, José Avila, Abdelkarim Ouerghi
Nanomaterials, 2021, 11 (11), pp.2921. ⟨10.3390/nano11112921⟩
Revisiting thermal conductivity and interface conductance at the nanoscale
Brice Davier, Philippe Dollfus, N D Le, Sebastian Volz, J Shiomi, J Saint-Martin
International Journal of Heat and Mass Transfer, 2021, 183, ⟨10.1016/j.ijheatmasstransfer.2021.122056⟩
Dissipative transport and phonon scattering suppression via valley engineering in singlelayer antimonene and arsenene field-effect transistors
Jiang Cao, Yu Wu, Hao Zhang, Demetrio Logoteta, Shengli Zhang, Marco Pala
npj 2D Materials and Applications, 2021, 5 (1), ⟨10.1038/s41699-021-00238-9⟩
1-D Drift-Diffusion Simulation of Two-Valley Semiconductors and Devices
Markus Muller, Philippe Dollfus, Michael Schroter
IEEE Transactions on Electron Devices, 2021, 68 (3), pp.1221-1227. ⟨10.1109/TED.2021.3051552⟩
Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys
Cyrine Ernandes, Lama Khalil, Hela Almabrouk, Debora Pierucci, Biyuan Zheng, José Avila, Pavel Dudin, Julien Chaste, Fabrice Oehler, Marco Pala, Federico Bisti, Thibault Brulé, Emmanuel Lhuillier, Anlian Pan, Abdelkarim Ouerghi
npj 2D Materials and Applications, 2021, 5, pp.7. ⟨10.1038/s41699-020-00187-9⟩
Electronic band gap of van der Waals α-As2Te3 crystals
Lama Khalil, Jean-Christophe Girard, Debora Pierucci, Federico Bisti, Julien Chaste, Fabrice Oehler, Charlie Gréboval, Ulrich Nguétchuissi Noumbé, Jean-Francois Dayen, Demetrio Logoteta, Gilles Patriarche, Julien Rault, Marco Pala, Emmanuel Lhuillier, Abdelkarim Ouerghi
Applied Physics Letters, 2021, 119 (4), pp.043103. ⟨10.1063/5.0058291⟩
2020
Electron transport properties of graphene nanoribbons with Gaussian deformation
Van-Truong Tran, Jérôme Saint-Martin, Philippe Dollfus
Physical Review B, 2020, 102 (7), ⟨10.1103/PhysRevB.102.075425⟩
2019 and earlier
